STS6601 product summary v dss i d r ds(on) (m ) max -60v -3.2a 160 @ vgs=-4.5v g d s 110 @ vgs=-10v s ot 26 t op v iew d g d d s 1 2 3 6 5 4 d features super high dense cell design for low r ds(on) . rugged and reliable. sot-26 package. symbol v ds v gs i dm 62.5 w a p d c 2 -55 to 150 i d units parameter -60 -3.2 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja a t a =25 c -12 a t a =70 c t a =70 c a w -2.6 1.28 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
symbol min typ max units bv dss -60 v -1 i gss 100 na v gs(th) -1.0 v 88 g fs 6.3 s v sd c iss 745 pf c oss 69 pf c rss 42 pf q g 12 nc 12 nc q gs 65.8 nc q gd 22 t d(on) 13.5 ns t r 1.5 ns t d(off) 3.2 ns t f ns gate-drain charge v ds =-30v,v gs =0v switching characteristics gate-source charge v dd =-30v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-30v,i d =-3.2a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-3.2a v ds =-10v , i d =-3.2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-2.6a 120 m ohm c f=1.0mhz c v ds =-30v,i d =-3.2a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-2a -0.8 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ nc v ds =-30v,i d =-3.2a,v gs =-4.5v 6.5 _ -2.0 110 160 i s maximum continuous drain-source diode forward current -2.0 a b STS6601 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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